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| Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 5.0 2.2 MAX. 1700 825 12 30 125 1.0 tbf UNIT V V A A W V A s Tmb 25 C IC = 5.0 A; IB = 0.91 A ICM = 5.0 A; IB(end) = 0.9 A PINNING - SOT93 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 12 30 12 25 200 25 125 150 150 UNIT V V A A A A mA A W C C average over any 20 ms period Tmb 25 C ESD LIMITING VALUES SYMBOL VC PARAMETER CONDITIONS MIN. MAX. 10 UNIT kV Electrostatic discharge capacitor voltage Human body model (250 pF, 1.5 k) 1 Turn-off current. September 1997 1 Rev 1.100 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 5.0 A; IB = 0.91 A IC = 5.0 A; IB = 0.91 A IC = 0.1 A; VCE = 5 V IC = 5 A; VCE = 1 V MIN. 7.5 825 0.78 12 5.5 TYP. 13.5 0.86 22 8 MAX. 1.0 2.0 1.0 1.0 0.95 35 11 UNIT mA mA mA V V V V DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (64 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICM = 5.0 A; LC = 260 H; Cfb = 4.8 nF; VCC = 180 V; IB(end) = 0.9 A; LB = 0.6 H; -VBB = 2 V; (-dIB/dt = 3.33 A/s) TYP. MAX. UNIT 2.2 tbf tbf tbf s s IC / mA + 50v 100-200R 250 Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R 200 100 0 VCE / V min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.100 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A TRANSISTOR IC DIODE ICsat + 150 v nominal adjust for ICsat t Lc IB I B end t 5 us 6.5 us 16 us VCE t IBend LB T.U.T. Cfb -VBB Fig.3. Switching times waveforms (64 kHz). Fig.5. Switching times test circuit. ICsat 90 % IC 100 hFE VCE = 5 V BU2727A/AF Tmb = 25 C Tmb = 85 C 10 % tf ts IB IBend t 10 t 1 0.01 0.1 1 10 IC / A 100 - IBM Fig.4. Switching times definitions. Fig.6. DC current gain. hFE = f (IC) Parameter Tmb (Low and high gain) September 1997 3 Rev 1.100 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A hFE 100 VCE = 1 V BU2727A/AF Tmb = 25 C Tmb = 85 C 120 110 100 90 80 70 60 50 40 30 20 10 PD% Normalised Power Derating 10 1 0.01 0 0.1 1 10 IC / A 100 0 20 40 60 80 100 Tmb / C 120 140 Fig.7. DC current gain. hFE = f (IC) Parameter Tmb (Low and high gain) Fig.10. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb) VCEsat / V BU2727A/AF 10 Tmb = 85 C Tmb = 25 C 10 Zth / (K/W) BU2525A 1 0.5 1 0.1 IC/IB = 12 IC/IB = 5 0.2 0.1 0.05 0.02 P D tp D= tp T t 0.1 0.01 D=0 0.001 1E-06 T 0.01 0.1 1 10 IC / A 100 1E-04 1E-02 t/s 1E+00 Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB Fig.11. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T VBEsat / V 1 IC = 6 A BU2727A/AF 0.9 0.8 0.7 4A Tmb = 85 C Tmb = 25 C 0.6 0 1 2 3 IB / A 4 Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC September 1997 4 Rev 1.100 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A VCC IC / A 35 30 BU2727A/AF/D/DF LC 25 20 Area where fails occur IBend VCL LB T.U.T. CFB 15 10 5 0 100 -VBB 1000 VCE / V 1700 Fig.12. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 4 V; LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 H; CFB = 1 - 3 nF; IB(end) = 0.8 - 4 A Fig.13. Reverse bias safe operating area. Tj Tjmax September 1997 5 Rev 1.100 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A MECHANICAL DATA Dimensions in mm Net Mass: 5 g 15.2 max 14 13.6 2 max 4.25 4.15 4.6 max 2 4.4 21 max 12.7 max 2.2 max dimensions within this zone are uncontrolled 1 5.5 11 Fig.14. SOT93; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". 0.5 min 13.6 min 2 3 1.15 0.95 0.5 M 1.6 0.4 September 1997 6 Rev 1.100 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.100 |
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